Observation of metastable structural excitations and concerted atomic motions on a crystal surfaceING-SHOUH HWANG; GOLOVCHENKO, J.Science (Washington, D.C.). 1992, Vol 258, Num 5085, pp 1119-1122, issn 0036-8075Article

A DOUBLE-CRYSTAL X-RAY SPECTROMETER STABILISED BY A DYNAMIC FEEDBACK SYSTEMANDERSEN SK; BHATTACHARYA PK; GOLOVCHENKO J et al.1979; J. PHYS. E; ISSN 0022-3735; GBR; DA. 1979; VOL. 12; NO 11; PP. 1063-1066; BIBL. 5 REF.Article

POSITRON-ANNIHILATION MOMENTUM PROFILES IN ALUMINUM: CORE CONTRIBUTION AND THE INDEPENDENT-PARTICLE MODEL.LYNN KG; MACDONALD JR; BOIE RA et al.1977; PHYS. REV. LETTERS; U.S.A.; DA. 1977; VOL. 38; NO 5; PP. 241-245; BIBL. 12 REF.Article

X-Ray-standing-wave atom location in heteropolar crystals and the problem of extinctionPATEL, J. R; GOLOVCHENKO, J. A.Physical review letters. 1983, Vol 50, Num 23, pp 1858-1861, issn 0031-9007Article

Surface stresses in atomic reconstructions of lead on silicon (111)RAO, K; MARTINEZ, R. E; GOLOVCHENKO, J. A et al.Surface science. 1992, Vol 277, Num 3, pp 323-329, issn 0039-6028Article

Bound states of guided matter waves : an atom and a charged wireVESTERGAARD HAU, L; BURNS, M. M; GOLOVCHENKO, J. A et al.Physical review. A. 1992, Vol 45, Num 9, pp 6468-6478, issn 1050-2947Article

Direct measurement of crystal surface stressMARTINEZ, R. E; AUGUSTYNIAK, W. M; GOLOVCHENKO, J. A et al.Physical review letters. 1990, Vol 64, Num 9, pp 1035-1038, issn 0031-9007Article

Optical bindingBURNS, M. M; FOURNIER, J.-M; GOLOVCHENKO, J. A et al.Physical review letters. 1989, Vol 63, Num 12, pp 1233-1236, issn 0031-9007, 4 p.Article

Atomic-scale surface modifications using a tunnelling microscopeBECKER, R. S; GOLOVCHENKO, J. A; SWARTZENTRUBER, B. S et al.Nature (London). 1987, Vol 325, Num 6103, pp 419-421, issn 0028-0836Article

Mobile point defects and atomic basis for structural transformations of a crystal surfaceING-SHOUH HWANG; THEISS, S. K; GOLOVCHENKO, J. A et al.Science (Washington, D.C.). 1994, Vol 265, Num 5171, pp 490-496, issn 0036-8075Article

Optical matter : crystallization and binding in intense optical fieldsBURNS, M. M; FOURNIER, J.-M; GOLOVCHENKO, J. A et al.Science (Washington, D.C.). 1990, Vol 249, Num 4970, pp 749-754, issn 0036-8075Article

Demonstration of the tunnel-diode effect on an atomic scaleBEDROSSIAN, P; CHEN, D. M; MORTENSEN, K et al.Nature (London). 1989, Vol 342, Num 6247, pp 258-260, issn 0028-0836, 3 p.Article

Tunneling images of the 5×5 surface reconstruction of Ge-Si(111)BECKER, R. S; GOLOVCHENKO, J. A; SWARTZENTRUBER, B. S et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 12, pp 8455-8457, issn 0163-1829Article

Low-energy diffraction during pulsed laser annealing: a time-resolved surface structural studyBECKER, R. S; HIGASHI, G. S; GOLOVCHENKO, J. A et al.Physical review letters. 1984, Vol 52, Num 4, pp 307-310, issn 0031-9007Article

Tunneling images of germanium surface reconstructions and phase boundariesBECKER, R. S; GOLOVCHENKO, J. A; SWARTZENTRUBER, B. S et al.Physical review letters. 1985, Vol 54, Num 25, pp 2678-2680, issn 0031-9007Article

Adatom registry on Si(111)-(√3×√3)R30°-BBEDROSSIAN, P; MORTENSEN, K; CHEN, D. M et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 11, pp 7545-7548, issn 0163-1829Article

Graphene as a subnanometre trans-electrode membraneGARAJ, S; HUBBARD, W; REINA, A et al.Nature (London). 2010, Vol 467, Num 7312, pp 190-193, issn 0028-0836, 4 p.Article

High coverage phases of Pb on the Si(111) surface : structures and phase transitionsING-SHOUH HWANG; MARTINEZ, R. E; CHIEN LIU et al.Surface science. 1995, Vol 323, Num 3, pp 241-257, issn 0039-6028Article

Real-space observation of surface states on Si(111)7×7 with the tunneling microscopeBECKER, R. S; GOLOVCHENKO, J. A; HAMANN, D. R et al.Physical review letters. 1985, Vol 55, Num 19, pp 2032-2034, issn 0031-9007Article

Growth and morphology of Pb on Si(111)GANZ, E; ING-SHOUH HWANG; FULIN XIONG et al.Surface science. 1991, Vol 257, Num 1-3, pp 259-273, issn 0039-6028Article

X-ray-standing-wave interface studies of germanium on Si(111)PATEL, J. R; GOLOVCHENKO, J. A; BEAN, J. C et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 10, pp 6884-6886, issn 0163-1829Article

Arsenic atom location on passivated silicon (111) surfacesPATEL, J. R; GOLOVCHENKO, J. A; FREELAND, P. E et al.Physical review. B, Condensed matter. 1987, Vol 36, Num 14, pp 7715-7717, issn 0163-1829Article

Liquid-metal-mediated homoepitaxial film growth of Ge at low temperatureFULIN XIONG; GANZ, E; LOESER, A. G et al.Applied physics letters. 1991, Vol 59, Num 27, pp 3586-3588, issn 0003-6951Article

New reconstructions on silicon (111) surfacesBECKER, R. S; GOLOVCHENKO, J. A; HIGASHI, G. S et al.Physical review letters. 1986, Vol 57, Num 8, pp 1020-1023, issn 0031-9007Article

X-Ray standing-wave and tunneling-microscope location of gallium atoms on a silicon surfaceZEGENHAGEN, J; PATEL, J. R; FREELAND, P et al.Physical review. B, Condensed matter. 1989, Vol 39, Num 2, pp 1298-1301, issn 0163-1829, 4 p.Article